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Manufacturer | Toshiba |
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Manufacturer's Part Number | SSM3K35CTC |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Package Style (Meter): CHIP CARRIER; Operating Mode: ENHANCEMENT MODE; Package Body Material: UNSPECIFIED; |
Datasheet | SSM3K35CTC Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 10 pF |
Maximum Drain Current (ID): | .25 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 20 V |
Terminal Position: | BOTTOM |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | R-XBCC-N3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | DRAIN |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Drain-Source On Resistance: | 2.4 ohm |