Toshiba - SSM3K36MFV,L3F

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SSM3K36MFV,L3F by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM3K36MFV,L3F
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Minimum DS Breakdown Voltage: 20 V; No. of Terminals: 3;
Datasheet SSM3K36MFV,L3F Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 7.3 pF
Maximum Drain Current (ID): .5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 20 V
Maximum Power Dissipation (Abs): .15 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .85 ohm
Moisture Sensitivity Level (MSL): 1
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