SSM5G01TU by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	SSM5G01TU
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Terminal Form: FLAT; Maximum Drain-Source On Resistance: .4 ohm;
Datasheet	SSM5G01TU Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	5
Maximum Power Dissipation (Abs):	.8 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	100 Cel
Maximum Drain-Source On Resistance:	.4 ohm
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	1 A

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