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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | SSM5G02TU |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (Abs) (ID): 1 A; |
| Datasheet | SSM5G02TU Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | .8 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 125 Cel |
| Maximum Drain-Source On Resistance: | .24 ohm |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DS Breakdown Voltage: | 12 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 1 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
