Toshiba - SSM5H16TU,LF(T

  1. Home
  2. Toshiba - SSM5H16TU,LF(T
SSM5H16TU,LF(T by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number SSM5H16TU,LF(T
Description Small Signal Field-Effect Transistors;
Datasheet SSM5H16TU,LF(T Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BSR302NL6327HTSA1 by Infineon Technologies

BSR302NL6327HTSA1

Infineon Technologies

Infineon's BSR302NL6327HTSA1 is a N-CHANNEL FET with 30V DS breakdown voltage, 3.7A ID, and 0.023 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance in enhancement mode operation.
2N7000 by Diotec Semiconductor Ag

2N7000

Diotec Semiconductor Ag

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Terminal Position: BOTTOM; JEDEC-95 Code: TO-92;
NTR4101PT1G by Onsemi

NTR4101PT1G

Onsemi

NTR4101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 1.8A Drain Current, and 0.085 ohm On Resistance. With ENHANCEMENT MODE operation, it features GULL WING terminals in a RECTANGULAR package style for surface mount assembly at temperatures ranging from -55 to 150°C.
FDN304P by Fairchild Semiconductor

FDN304P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 150 Cel;
FDS6681Z by Onsemi

FDS6681Z

Onsemi

FDS6681Z by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and 20A max Drain Current. Operating in ENHANCEMENT MODE, it has a max Power Dissipation of 2.5W and 0.0046 ohm Drain-Source On Resistance.
NDC7003P by Onsemi

NDC7003P

Onsemi

NDC7003P by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.34A, operating at 150°C with a breakdown voltage of 60V. With a package style of small outline and gull wing terminals, it offers efficient performance in compact designs.
SI4532CDY-T1-GE3 by Vishay Intertechnology

SI4532CDY-T1-GE3

Vishay Intertechnology

SI4532CDY-T1-GE3 by Vishay Intertechnology is a Small Signal FET with N/P-channel, 2 elements, and built-in diode. It operates in enhancement mode for switching applications. With max drain current of 6A, 0.047 ohm RDS(on), and 30V breakdown voltage, it's ideal for high-power circuits in small outline packages.
SI4925DDY-T1-GE3 by Vishay Siliconix

SI4925DDY-T1-GE3

Vishay Siliconix

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Qualification: Not Qualified;
LND150N3-GP014 by Supertex

LND150N3-GP014

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; No. of Elements: 1;
MMBFJ113 by National Semiconductor

MMBFJ113

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Qualification: Not Qualified; No. of Terminals: 3;
NDC7003P by National Semiconductor

NDC7003P

National Semiconductor

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 6;
2N7002K by Jiangsu Changjiang Electronics Technology

2N7002K

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
BS170 by Itt Semiconductor

BS170

Itt Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN LEAD;
BS170 by Motorola

BS170

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Tin/Lead (Sn/Pb);
SBSS84LT1G by Onsemi

SBSS84LT1G

Onsemi

SBSS84LT1G by Onsemi is a P-CHANNEL FET with 50V DS Breakdown Voltage, 0.13A Drain Current, and 10Ω On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has GULL WING terminals and can handle up to 150°C temperature.
FDC6420C by Fairchild Semiconductor

FDC6420C

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Transistor Element Material: SILICON; Terminal Position: DUAL;
FDC6305N by Fairchild Semiconductor

FDC6305N

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
BSS123LT7G by Onsemi

BSS123LT7G

Onsemi

BSS123LT7G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring an enhancement mode transistor with built-in diode. Operates b/w -55 to 150 °C, making it suitable for various electronic devices.
BS170_D75Z by Fairchild Semiconductor

BS170_D75Z

Fairchild Semiconductor

BS170_D75Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 0.83W power dissipation at 150°C.
SIS443DN-T1-GE3 by Vishay Intertechnology

SIS443DN-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIS443DN-T1-GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With -55 to 150 °C operating temperature range, this transistor has 0.035A ID and 0.0117 ohm Drain-Source On Resistance.