Toshiba - SSM6E03TU(TE85L)

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SSM6E03TU(TE85L) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM6E03TU(TE85L)
Description N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (ID): 1.8 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 1.8 A;
Datasheet SSM6E03TU(TE85L) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .5 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 1.8 A
Maximum Drain Current (Abs) (ID): 1.8 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
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