Toshiba - SSM6E03TU(TE85L)

  1. Home
  2. Toshiba - SSM6E03TU(TE85L)
SSM6E03TU(TE85L) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number SSM6E03TU(TE85L)
Description N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (ID): 1.8 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 1.8 A;
Datasheet SSM6E03TU(TE85L) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .5 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 1.8 A
Maximum Drain Current (Abs) (ID): 1.8 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC817-16 by Secos

BC817-16

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
SI4532DY by Siliconix

SI4532DY

Siliconix

N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): 3.9 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
TIP3055 by Tt Electronics Plc

TIP3055

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
BC548C by Bharat Electronics

BC548C

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2219A by Shanghai Lunsure Electronic Technology

2N2219A

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
TIP42C by General Electric Solid State

TIP42C

General Electric Solid State

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
2N2907A by Semiconductors

2N2907A

Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N7002W by Comchip Technology

2N7002W

Comchip Technology

Other Transistors;
TIP127 by Philips Semiconductors

TIP127

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
BC548C by North American Philips Discrete Products Div

BC548C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N3055 by Ledex Lucas Products

2N3055

Ledex Lucas Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2010 by Acrian

2010

Acrian

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Maximum Collector Current (IC): 2.5 A; No. of Elements: 1;
TIP122 by Sinyork

TIP122

Sinyork

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .065 W; Maximum Collector Current (IC): .005 A; No. of Elements: 1;
TIP41C by Inchange Semiconductor

TIP41C

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP31C by Unisonic Technologies

TIP31C

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BC817-25 by Shandong Yiguang Electronic Joint Stock

BC817-25

Shandong Yiguang Electronic Joint Stock

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N2219A by Ksl Microdevices

2N2219A

Ksl Microdevices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBT2222A by Weitron Technology

MMBT2222A

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
2N4401 by Sinyork

2N4401

Sinyork

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
2N2905A by North American Philips Discrete Products Div

2N2905A

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;