Toshiba - SSM6J414TU,LF

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SSM6J414TU,LF by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM6J414TU,LF
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .0225 ohm;
Datasheet SSM6J414TU,LF Datasheet
NAME DESCRIPTION
Other Names: SSM6J414TULF(TDKR
SSM6J414TULF(TTR
SSM6J414TU,LF(T
SSM6J414TULFDKR
SSM6J414TULF
SSM6J414TU,LFCT
SSM6J414TULF(TCT
SSM6J414TULF(TCT-ND
SSM6J414TULF(TDKR-ND
SSM6J414TULFCT
SSM6J414TULF(TTR-ND
SSM6J414TULFTR
SSM6J414TU,LFDKR
SSM6J414TU,LFTR
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 90 pF
Maximum Drain Current (ID): 6 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Maximum Power Dissipation (Abs): 1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .0225 ohm
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