Toshiba - SSM6K411TU

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SSM6K411TU by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM6K411TU
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .012 ohm;
Datasheet SSM6K411TU Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 170 pF
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 20 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .012 ohm
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