Toshiba - SSM6K513NU

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SSM6K513NU by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM6K513NU
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; No. of Terminals: 6; Transistor Element Material: SILICON;
Datasheet SSM6K513NU Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 50 A
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 1.25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .012 ohm
Avalanche Energy Rating (EAS): 37.6 mJ
Maximum Feedback Capacitance (Crss): 52 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): NOT SPECIFIED
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