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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | SSM6K809R,LXHF |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain-Source On Resistance: .036 ohm; Maximum Feedback Capacitance (Crss): 35 pF; |
| Datasheet | SSM6K809R,LXHF Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 6 A |
| Maximum Pulsed Drain Current (IDM): | 24 A |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | 1.5 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .036 ohm |
| Avalanche Energy Rating (EAS): | 19.5 mJ |
| Other Names: |
264-SSM6K809RLXHFCT 264-SSM6K809R,LXHFCT 264-SSM6K809R,LXHFDKR-ND 264-SSM6K809R,LXHFDKR SSM6K809R,LXHF(T 264-SSM6K809RLXHFDKR 264-SSM6K809R,LXHFTR-ND 264-SSM6K809R,LXHFCT-ND 264-SSM6K809R,LXHFTR 264-SSM6K809RLXHFTR |
| Maximum Feedback Capacitance (Crss): | 35 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 60 V |
| Reference Standard: | AEC-Q101 |
