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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | SSM6L14FE(TE85L,F) |
| Description | N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .8 A; Maximum Drain Current (Abs) (ID): .8 A; |
| Datasheet | SSM6L14FE(TE85L,F) Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | .15 W |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | .8 A |
| Maximum Drain Current (Abs) (ID): | .8 A |
| Sub-Category: | Other Transistors |
| Peak Reflow Temperature (C): | 260 |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| Surface Mount: | YES |
