SSM6N03FE by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	SSM6N03FE
Description	N-CHANNEL; Configuration: SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
Datasheet	SSM6N03FE Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.1 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN SILVER
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.15 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	12 ohm
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e2
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Additional Features:	HIGH INPUT IMPEDENCE, LOW THRESHOLD
Maximum Drain Current (Abs) (ID):	.1 A

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