Toshiba - SSM6N09FU(TE85L,F)

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SSM6N09FU(TE85L,F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM6N09FU(TE85L,F)
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): .4 A; Maximum Drain Current (ID): .4 A;
Datasheet SSM6N09FU(TE85L,F) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .3 W
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .4 A
Maximum Drain Current (Abs) (ID): .4 A
Sub-Category: FET General Purpose Powers
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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