Toshiba - SSM6N15FE(NHF,F)

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SSM6N15FE(NHF,F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM6N15FE(NHF,F)
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Drain Current (ID): .1 A; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
Datasheet SSM6N15FE(NHF,F) Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .1 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 7 ohm
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