Toshiba - SSM6N17FU(TE85L,F)

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SSM6N17FU(TE85L,F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM6N17FU(TE85L,F)
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .1 A; Maximum Drain Current (ID): .1 A; Operating Mode: ENHANCEMENT MODE;
Datasheet SSM6N17FU(TE85L,F) Datasheet
NAME DESCRIPTION
Other Names: SSM6N17FU(TE85LF)TR
SSM6N17FU(TE85LF)DKR
SSM6N17FU(TE85LF)CT
Maximum Power Dissipation (Abs): .2 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .1 A
Maximum Drain Current (Abs) (ID): .1 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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