Toshiba - SSM6N67NU

  1. Home
  2. Toshiba - SSM6N67NU
SSM6N67NU by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number SSM6N67NU
Description Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
Datasheet SSM6N67NU Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRLML2502TRPBF-1 by International Rectifier

IRLML2502TRPBF-1

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .045 ohm;
FDN340P-F095 by Fairchild Semiconductor

FDN340P-F095

Fairchild Semiconductor

Fairchild Semiconductor's FDN340P-F095 is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2A, Power Dissipation of 0.5W, and operates in ENHANCEMENT MODE. The transistor has a GULL WING terminal form, RECTANGULAR package shape, and METAL-OXIDE SEMICONDUCTOR technology.
NDS332P by Fairchild Semiconductor

NDS332P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
NDS331N by National Semiconductor

NDS331N

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Application: SWITCHING;
BSS138K by Fairchild Semiconductor

BSS138K

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; JEDEC-95 Code: TO-236AB; Package Body Material: PLASTIC/EPOXY;
FDN304P_NL by Fairchild Semiconductor

FDN304P_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDN304P_NL is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.4A and Drain-Source On Resistance of 0.052 ohm. The transistor operates in ENHANCEMENT MODE, with a max power dissipation of 0.5W at 150°C.
FDV304P by Fairchild Semiconductor

FDV304P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
FDY300NZ by Onsemi

FDY300NZ

Onsemi

FDY300NZ by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.6A Drain Current, and 0.7 ohm On Resistance. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package suitable for surface mount technology.
FQT1N60CTF_WS by Fairchild Semiconductor

FQT1N60CTF_WS

Fairchild Semiconductor

FQT1N60CTF_WS by Fairchild Semiconductor is a small signal N-channel field effect transistor (FET) with a min DS breakdown voltage of 600V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 0.2A.
BSS138W by Panjit International

BSS138W

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
SI2365EDS-T1-GE3 by Vishay Intertechnology

SI2365EDS-T1-GE3

Vishay Intertechnology

SI2365EDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 5.9A Drain Current, and 0.041 ohm On Resistance. With ENHANCEMENT MODE operation and GULL WING terminals, it operates b/w -55 to 150 °C for various electronic designs.
BSS123W-7-F by Diodes Incorporated

BSS123W-7-F

Diodes Incorporated

Diodes Inc.'s BSS123W-7-F is a N-channel FET with 100V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 0.17A max drain current, and 6ohm max on resistance. Operating in enhancement mode, it has a max power dissipation of 0.2W and can withstand temperatures from -55 to 150°C.
FDN304PZ_NL by Fairchild Semiconductor

FDN304PZ_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDN304PZ_NL is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.4A Drain Current, 0.052 ohm On Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150°C operating temperature.
BSS139H6327XTSA1 by Infineon Technologies

BSS139H6327XTSA1

Infineon Technologies

Infineon's BSS139H6327XTSA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 30 ohm RDS(on), and 3.3pF Crss. Ideal for depletion mode applications, it features a built-in diode and GULL WING terminals in a small outline package.
BSS138P,215 by Nexperia

BSS138P,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
NDC7002N by Fairchild Semiconductor

NDC7002N

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
BSS138 by Micro Commercial Components

BSS138

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
BS170 by Vishay Siliconix

BS170

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: ROUND; JEDEC-95 Code: TO-92; Minimum DS Breakdown Voltage: 60 V;
FDG8850NZ by Fairchild Semiconductor

FDG8850NZ

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Position: DUAL; Qualification: Not Qualified;
2N7000_D26Z by Fairchild Semiconductor

2N7000_D26Z

Fairchild Semiconductor

2N7000_D26Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 0.4W Power Dissipation and -55 to 150 °C operating temperature range, it offers reliable performance.