SSM6N815R,LF(B by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	SSM6N815R,LF(B
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Peak Reflow Temperature (C): 260; Terminal Position: DUAL;
Datasheet	SSM6N815R,LF(B Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2 A
Maximum Pulsed Drain Current (IDM):	4 A
Surface Mount:	YES
No. of Terminals:	6
Maximum Power Dissipation (Abs):	1.4 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.142 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	10.1 mJ
Maximum Feedback Capacitance (Crss):	16 pF
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	100 V
Peak Reflow Temperature (C):	260

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