Toshiba - SSM6P36FE(TPL3,F)

  1. Home
  2. Toshiba - SSM6P36FE(TPL3,F)
SSM6P36FE(TPL3,F) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number SSM6P36FE(TPL3,F)
Description P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .33 A; Maximum Operating Temperature: 150 Cel;
Datasheet SSM6P36FE(TPL3,F) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .15 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .33 A
Maximum Drain Current (Abs) (ID): .33 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BDW93C by Texas Instruments

BDW93C

Texas Instruments

Texas Instruments' BDW93C NPN Darlington transistor offers 80W power dissipation, 750 min hFE, and 12A max collector current. Ideal for high-power applications in environments up to 150°C.
2N2907A by Philips Semiconductors

2N2907A

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BUX87 by Telefunken Microelectronics

BUX87

Telefunken Microelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
TIP117 by Iskra Semic Capacitors Industry

TIP117

Iskra Semic Capacitors Industry

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-609 Code: e0;
BD140 by Inchange Semiconductor

BD140

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BDX53C by Comset Semiconductors

BDX53C

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
TIP111 by Intersil

TIP111

Intersil

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
TIP111 by Jiangsu Changjiang Electronics Technology

TIP111

Jiangsu Changjiang Electronics Technology

TIP111 by Jiangsu Changjiang Electronics Technology is an NPN Darlington transistor with a max power dissipation of 50W, min DC current gain of 500, and max collector current of 4A. It is commonly used in various applications requiring high power amplification and switching capabilities.
MPS-A92 by General Electric Solid State

MPS-A92

General Electric Solid State

MPS-A92 by General Electric Solid State is a PNP transistor with a single configuration. It has a max power dissipation of 0.625W and can operate at temperatures up to 150°C. This transistor is commonly used in various electronic applications requiring low DC current gain and a max collector current of 0.5A.
BC547C by Weitron Technology

BC547C

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP142T by Inchange Semiconductor

TIP142T

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 1000;
2N2907A by Shanghai Lunsure Electronic Technology

2N2907A

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
D44H11 by General Electric Solid State

D44H11

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
BC857C by Philips Semiconductors

BC857C

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
IRF640 by Semiconductor Technology

IRF640

Semiconductor Technology

Other Transistors;
TIP125 by Harris Semiconductor

TIP125

Harris Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP3055 by Philips Semiconductors

TIP3055

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
TIP31C by Plessey Semiconductors Discrete Components Div

TIP31C

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
BSS84AKMB,315 by NXP Semiconductors

BSS84AKMB,315

NXP Semiconductors

BSS84AKMB,315 by NXP Semiconductors is a P-CHANNEL transistor with a max drain current of 0.23A and power dissipation of 0.715W in enhancement mode. It utilizes metal-oxide semiconductor technology, operates at up to 150°C, and is ideal for surface mount applications requiring high efficiency and performance.
TIP32C by Mospec Semiconductor

TIP32C

Mospec Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;