Toshiba - T2N7002AK,LM

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T2N7002AK,LM by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number T2N7002AK,LM
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 1; JESD-30 Code: R-PDSO-G3;
Datasheet T2N7002AK,LM Datasheet
NAME DESCRIPTION
Other Names: T2N7002AKLM(BDKR-ND
T2N7002AK,LM(T
T2N7002AKLM(BTR
T2N7002AK,LM(B
T2N7002AKLM(BDKR
T2N7002AKLM(BCT-ND
T2N7002AKLM(BCT
T2N7002AKLMCT
T2N7002AKLMDKR
T2N7002AKLMTR
T2N7002AKLM(BTR-ND
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): .7 pF
Maximum Drain Current (ID): .2 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): 1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: 4.7 ohm
Moisture Sensitivity Level (MSL): 1
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