Toshiba - TC511632FL-85

  1. Home
  2. Toshiba - TC511632FL-85
TC511632FL-85 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TC511632FL-85
Description PSEUDO STATIC RAM; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: SOP; Package Shape: RECTANGULAR; No. of Functions: 1;
Datasheet TC511632FL-85 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 32KX16
Maximum Seated Height: 2.8 mm
Minimum Supply Voltage (Vsup): 4.5 V
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 40
No. of Words: 32768 words
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Technology: CMOS
JESD-30 Code: R-PDSO-G40
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 70 Cel
Package Code: SOP
Width: 10.7 mm
Memory Density: 524288 bit
Memory IC Type: PSEUDO STATIC RAM
JESD-609 Code: e0
Minimum Operating Temperature: 0 Cel
Memory Width: 16
No. of Functions: 1
Qualification: Not Qualified
Length: 25.7 mm
Maximum Access Time: 85 ns
No. of Words Code: 32K
Nominal Supply Voltage / Vsup (V): 5
Parallel or Serial: PARALLEL
Terminal Pitch: 1.27 mm
Temperature Grade: COMMERCIAL
Maximum Supply Voltage (Vsup): 5.5 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IDT71V3576S150PFGI8 by Renesas Electronics

IDT71V3576S150PFGI8

Renesas Electronics

The Renesas Electronics IDT71V3576S150PFGI8 is a 128Kx36 SRAM with synchronous operation at 150 MHz. It features a 3-STATE output and operates at an industrial temperature range of -40 to 85°C. Ideal for applications requiring fast access times and high memory density.
CY62148GN-45ZSXI by Cypress Semiconductor

CY62148GN-45ZSXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP2; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;
5962-8866204NA by Austin Semiconductor

5962-8866204NA

Austin Semiconductor

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Memory Density: 262144 bit;
IDT71V124SA15PHGI by Integrated Device Technology

IDT71V124SA15PHGI

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Supply Current: 120 mA;
CAT24C44VI by Catalyst Semiconductor

CAT24C44VI

Catalyst Semiconductor

NON-VOLATILE SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Seated Height: 1.75 mm;
APS6404L-3SQR-SN by Ap Memory Technology

APS6404L-3SQR-SN

Ap Memory Technology

APS6404L-3SQR-SN by Ap Memory Technology is an 8MX8 SRAM with 133 MHz clock frequency, ideal for synchronous operations. With a memory density of 67108864 bit and operating voltage range of 2.7V to 3.6V, it suits applications requiring high-speed data processing in compact designs.
IDT70V24L20PFGI8 by Renesas Electronics

IDT70V24L20PFGI8

Renesas Electronics

The Renesas Electronics IDT70V24L20PFGI8 is a 4Kx16 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a low profile flatpack package and offers fast access time of 20ns. Ideal for industrial applications requiring high-speed memory operations.
IS61WV102416BLL-10TLI by Integrated Silicon Solution

IS61WV102416BLL-10TLI

Integrated Silicon Solution

IS61WV102416BLL-10TLI by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. Featuring 10ns access time, it's ideal for high-speed applications requiring 16-bit memory width and common I/O type. This CMOS technology-based chip offers 1M words code and supports parallel interface with low standby current of 0.02 Amp.
71342LA20PFG8 by Integrated Device Technology

71342LA20PFG8

Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 64; Package Code: LQFP; Package Shape: SQUARE; Memory Width: 8;
CY14B101Q2-LHXI by Infineon Technologies

CY14B101Q2-LHXI

Infineon Technologies

Infineon's CY14B101Q2-LHXI is a 128Kx8 non-volatile SRAM with synchronous operation, 40 MHz clock frequency, and 3.6V max supply voltage. Ideal for industrial applications, it features a small outline package with very thin profile and operates in temperatures ranging from -40 to 85°C.
IDT71024S20YGI8 by Renesas Electronics

IDT71024S20YGI8

Renesas Electronics

The Renesas Electronics IDT71024S20YGI8 is a 128Kx8 SRAM with 3-STATE output, operating at 5V. It features a small outline package and asynchronous mode, suitable for industrial applications requiring fast access times of up to 20ns. The memory IC type is standard SRAM with parallel I/O, making it ideal for high-speed data storage needs.
CY7C1520KV18-250BZXI by Infineon Technologies

CY7C1520KV18-250BZXI

Infineon Technologies

Infineon's CY7C1520KV18-250BZXI is a 2MX36 DDR SRAM with 250 MHz clock frequency, operating at 1.8V. It features synchronous operation, 3-STATE output, and low profile grid array package. Ideal for industrial applications requiring fast access times and high memory density.
70V38L20PFGI8 by Integrated Device Technology

70V38L20PFGI8

Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LFQFP; Package Shape: SQUARE; Maximum Access Time: 20 ns;
5962-8685916LA by Micross Components

5962-8685916LA

Micross Components

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 24; Package Code: DIP; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
23LC1024T-E/SN by Microchip Technology

23LC1024T-E/SN

Microchip Technology

23LC1024T-E/SN by Microchip Technology is a synchronous SRAM with 128KX8 organization and 1048576 bit memory density. It operates at a max clock frequency of 16 MHz and has a min standby voltage of 2.5 V. This memory IC is commonly used in automotive applications due to its TS 16949 screening level and temperature grade.
DS1225Y-200+ by Maxim Integrated

DS1225Y-200+

Maxim Integrated

DS1225Y-200+ by Maxim Integrated is an 8Kx8 SRAM with 8192 words, 65536 bit memory density, and 200 ns access time. It operates at a voltage range of 4.5V to 5.5V and is ideal for commercial applications requiring non-volatile memory solutions in microelectronic assemblies.
CY14B104LA-ZS25XIT by Infineon Technologies

CY14B104LA-ZS25XIT

Infineon Technologies

Infineon's CY14B104LA-ZS25XIT is a 512Kx8 SRAM with 3V nominal voltage, operating in industrial temperature range. It features parallel technology, 25ns access time, and non-volatile memory type. Ideal for applications requiring fast and reliable data storage in compact electronic devices.
IDT71V124SA15PHGI8 by Renesas Electronics

IDT71V124SA15PHGI8

Renesas Electronics

The Renesas Electronics IDT71V124SA15PHGI8 is a 128Kx8 SRAM with 3.3V supply voltage, operating in industrial temperature range. It features 15ns access time, 1.2mm seated height, and GULL WING terminals. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
71321LA25PFGI8 by Integrated Device Technology

71321LA25PFGI8

Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LQFP; Package Shape: SQUARE; JESD-30 Code: S-PQFP-G64;
CAT24C44VI by Onsemi

CAT24C44VI

Onsemi

CAT24C44VI by Onsemi is a 256-bit non-volatile SRAM with 16x16 organization. It operates at 5V, has a max access time of 375ns, and consumes up to 3mA. Ideal for industrial applications requiring small outline packages and synchronous operation.