Toshiba - TC5116800ANT-60

  1. Home
  2. Toshiba - TC5116800ANT-60
TC5116800ANT-60 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TC5116800ANT-60
Description OTHER DRAM; No. of Terminals: 28; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Ports: 1; Nominal Supply Voltage / Vsup (V): 5;
Datasheet TC5116800ANT-60 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 2MX8
Maximum Seated Height: 1.2 mm
Access Mode: FAST PAGE
Minimum Supply Voltage (Vsup): 4.5 V
Surface Mount: YES
No. of Terminals: 28
No. of Words: 2097152 words
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE, THIN PROFILE
Technology: CMOS
JESD-30 Code: R-PDSO-G28
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Package Code: TSOP2
Width: 10.16 mm
No. of Ports: 1
Memory Density: 16777216 bit
Memory IC Type: OTHER DRAM
Memory Width: 8
No. of Functions: 1
Qualification: Not Qualified
Length: 18.41 mm
Maximum Access Time: 60 ns
No. of Words Code: 2M
Nominal Supply Voltage / Vsup (V): 5
Terminal Pitch: 1.27 mm
Maximum Supply Voltage (Vsup): 5.5 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MT47H128M16RT-25EAAT:C by Micron Technology

MT47H128M16RT-25EAAT:C

Micron Technology

Micron Technology's MT47H128M16RT-25EAAT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
IS43TR16256BL-125KBLI by Integrated Silicon Solution

IS43TR16256BL-125KBLI

Integrated Silicon Solution

IS43TR16256BL-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a self-refresh feature. It is commonly used in industrial applications requiring high memory density and fast data processing.
KVR16LN11/8 by Kingston Technology Company

KVR16LN11/8

Kingston Technology Company

Kingston KVR16LN11/8 DDR DRAM Module features 1Gx64 organization, operates synchronously at 1.35V, and has a memory width of 64 bits. Ideal for applications requiring high-speed data processing in microelectronic assemblies with a max operating temperature of 85°C.
MT48LC4M16A2P-6AIT:J by Micron Technology

MT48LC4M16A2P-6AIT:J

Micron Technology

Micron Technology's MT48LC4M16A2P-6AIT:J is a 4MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density.
S70KL1282DPBHA023 by Infineon Technologies

S70KL1282DPBHA023

Infineon Technologies

Infineon's S70KL1282DPBHA023 is a 16MX8 DRAM with 200 MHz clock frequency, operating at 3.6V max voltage. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 screening level and very thin profile grid array package style.
IS43LR32160C-6BLI by Integrated Silicon Solution

IS43LR32160C-6BLI

Integrated Silicon Solution

IS43LR32160C-6BLI by Integrated Silicon Solution is a 16MX32 DDR1 DRAM with 166 MHz clock frequency. Operating at 1.8V, it offers 5.5 ns access time and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
MT41K256M16HA-125MAIT:E by Micron Technology

MT41K256M16HA-125MAIT:E

Micron Technology

Micron Technology's MT41K256M16HA-125MAIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications in various electronic devices.
M374S1723FTS-C7A by Samsung

M374S1723FTS-C7A

Samsung

Samsung M374S1723FTS-C7A is a 16MX72 Synchronous DRAM Module with 133 MHz fCLK. It operates at 3.3V, has 72 memory width, and supports FOUR BANK PAGE BURST access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.
MTA9ASF1G72HZ-3G2R1 by Micron Technology

MTA9ASF1G72HZ-3G2R1

Micron Technology

DDR4 DRAM MODULE;
W631GG6NB-12 by Winbond Electronics

W631GG6NB-12

Winbond Electronics

Winbond Electronics' W631GG6NB-12 is a DDR3 DRAM with 64MX16 organization, operating at up to 800 MHz. It features a 96-terminal grid array package suitable for synchronous applications. With a low standby current of 0.04 Amp and common I/O type, it's ideal for high-speed memory requirements in various electronic devices.
MT40A1G16KD-062EIT:E by Micron Technology

MT40A1G16KD-062EIT:E

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
MB814400A-70PZ by Fujitsu Semiconductor America

MB814400A-70PZ

Fujitsu Semiconductor America

FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: ZIP; Refresh Cycles: 1024; Package Shape: RECTANGULAR;
AS4C256M16D3B-12BIN by Alliance Memory

AS4C256M16D3B-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3B-12BIN is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. Featuring a package style of GRID ARRAY, it has a memory density of 4294967296 bit and operates at temperatures ranging from 0 to 85 °C. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.
M378B5673EH1-CF8 by Samsung

M378B5673EH1-CF8

Samsung

Samsung M378B5673EH1-CF8 DDR DRAM Module has 256MX64 organization, operates at 533 MHz with 3-STATE output. Ideal for high-performance computing applications due to its synchronous operation and dual bank page burst access mode.
HY5DU573222FP-33 by Sk Hynix

HY5DU573222FP-33

Sk Hynix

SK Hynix's HY5DU573222FP-33 is a DDR1 DRAM with 8MX32 organization, operating at 300 MHz. It features 144 terminals in a low profile grid array package, suitable for applications requiring high-speed synchronous memory access and common I/O type. With a max clock frequency of 300 MHz and 268435456-bit memory density, it offers fast data processing capabilities for commercial-grade systems.
AS4C64M16D2A-25BINTR by Alliance Memory

AS4C64M16D2A-25BINTR

Alliance Memory

Alliance Memory's AS4C64M16D2A-25BINTR is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, operating at 1.8V. Suitable for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package style.
MT40A512M16LY-062EIT:ETR by Micron Technology

MT40A512M16LY-062EIT:ETR

Micron Technology

Micron Technology's MT40A512M16LY-062EIT:ETR is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. This thin-profile memory module is suitable for applications requiring high-speed data processing in a compact form factor.
S27KL0642DPBHI030 by Infineon Technologies

S27KL0642DPBHI030

Infineon Technologies

Infineon's S27KL0642DPBHI030 is a 8MX8 DRAM with 67108864 bit memory density. It operates at 166 MHz clock frequency and has a very thin profile grid array package style. Ideal for applications requiring fast synchronous memory access in compact spaces.
MT46V16M16P-75IT:F by Micron Technology

MT46V16M16P-75IT:F

Micron Technology

Micron Technology's MT46V16M16P-75IT:F is a DDR1 DRAM with 16MX16 organization, operating at 133 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
KVR16LS11/4 by Kingston Technology Company

KVR16LS11/4

Kingston Technology Company

Kingston's KVR16LS11/4 DDR DRAM MODULE features 512MX64 organization, 1.35V supply voltage, and 64-bit memory width. Ideal for applications requiring synchronous operation in microelectronic assemblies with a max operating temperature of 85°C.