Toshiba - TC514800AJL-80

  1. Home
  2. Toshiba - TC514800AJL-80
TC514800AJL-80 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TC514800AJL-80
Description FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: SOJ; Refresh Cycles: 1024; Package Shape: RECTANGULAR;
Datasheet TC514800AJL-80 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 512KX8
Maximum Seated Height: 3.7 mm
Access Mode: FAST PAGE
Minimum Supply Voltage (Vsup): 4.5 V
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 28
No. of Words: 524288 words
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Technology: CMOS
JESD-30 Code: R-PDSO-J28
Package Shape: RECTANGULAR
Terminal Form: J BEND
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 70 Cel
Package Code: SOJ
Width: 10.16 mm
No. of Ports: 1
Memory Density: 4194304 bit
Memory IC Type: FAST PAGE DRAM
JESD-609 Code: e0
Minimum Operating Temperature: 0 Cel
Memory Width: 8
No. of Functions: 1
Qualification: Not Qualified
Refresh Cycles: 1024
Length: 18.42 mm
Maximum Access Time: 80 ns
No. of Words Code: 512K
Nominal Supply Voltage / Vsup (V): 5
Additional Features: RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH
Terminal Pitch: 1.27 mm
Temperature Grade: COMMERCIAL
Maximum Supply Voltage (Vsup): 5.5 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

M393A2K43CB2-CVF by Samsung

M393A2K43CB2-CVF

Samsung

Samsung's M393A2K43CB2-CVF DDR4 DRAM module features 16GX8 organization, 1.2V supply voltage, and 137.4Gb memory density. Ideal for high-performance computing applications requiring fast data access with dual bank page burst capability in a compact MICROELECTRONIC ASSEMBLY package.
IS43TR16256BL-107MBLI by Integrated Silicon Solution

IS43TR16256BL-107MBLI

Integrated Silicon Solution

IS43TR16256BL-107MBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 1.35V supply, operating from -40 to 95°C. Featuring synchronous mode and self-refresh, it has a thin profile grid array package suitable for industrial applications requiring high memory density and multi-bank page burst access.
MT48LC32M16A2TG-75IT:C by Alliance Memory

MT48LC32M16A2TG-75IT:C

Alliance Memory

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT40A512M16TB-062E:R by Micron Technology

MT40A512M16TB-062E:R

Micron Technology

Micron Technology's MT40A512M16TB-062E:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as computers and servers.
MT40A2G4SA-062E:E by Micron Technology

MT40A2G4SA-062E:E

Micron Technology

Micron Technology's MT40A2G4SA-062E:E is a DDR4 DRAM with 2GX4 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
MT40A1G8WE-083EIT:B by Micron Technology

MT40A1G8WE-083EIT:B

Micron Technology

Micron Technology's MT40A1G8WE-083EIT:B is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access speeds.
TC514400AZ-60 by Toshiba

TC514400AZ-60

Toshiba

Toshiba's TC514400AZ-60 is a 1MX4 DRAM with 1048576 words, operating at 5V. It features a max access time of 60ns and refresh cycles of 1024, suitable for commercial applications requiring fast page access in a rectangular package style.
MTA4ATF51264HZ-2G3B1 by Micron Technology

MTA4ATF51264HZ-2G3B1

Micron Technology

Micron's MTA4ATF51264HZ-2G3B1 is a 512MX64 DDR DRAM MODULE with CMOS tech. Operating at 1.2V, it offers 536870912 words memory width and 34359738368 bit density. Ideal for applications requiring high-speed synchronous operation in microelectronic assemblies.
MT40A256M16LY-062EAUT:F by Micron Technology

MT40A256M16LY-062EAUT:F

Micron Technology

Micron Technology's MT40A256M16LY-062EAUT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, common I/O type, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package style.
S27KS0642GABHI023 by Cypress Semiconductor

S27KS0642GABHI023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Length: 8 mm; No. of Ports: 1;
K4S281632K-UC75 by Samsung

K4S281632K-UC75

Samsung

Samsung's K4S281632K-UC75 is a 8MX16 DRAM with 133 MHz clock frequency, suitable for commercial applications. Features include 3.3V supply voltage, 70°C operating temperature, and 4096 refresh cycles. Ideal for systems requiring high-speed synchronous memory with low power consumption.
MT41J128M16HA-125IT:D by Silicon360

MT41J128M16HA-125IT:D

Silicon360

DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B96; Operating Mode: SYNCHRONOUS;
S27KL0642DPBHI030 by Infineon Technologies

S27KL0642DPBHI030

Infineon Technologies

Infineon's S27KL0642DPBHI030 is a 8MX8 DRAM with 67108864 bit memory density. It operates at 166 MHz clock frequency and has a very thin profile grid array package style. Ideal for applications requiring fast synchronous memory access in compact spaces.
MT48LC16M16A2P-6AXIT:GTR by Micron Technology

MT48LC16M16A2P-6AXIT:GTR

Micron Technology

Micron Technology's MT48LC16M16A2P-6AXIT:GTR is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory operations in a compact form factor.
K4S281632O-LC60 by Samsung

K4S281632O-LC60

Samsung

Samsung's K4S281632O-LC60 is a 8MX16 DRAM with 166 MHz clock frequency and 3.3V supply voltage. Ideal for applications requiring fast data access, it features synchronous operation, 70°C max temp, and small outline package style.
MT41J128M16JT-125:K by Micron Technology

MT41J128M16JT-125:K

Micron Technology

Micron Technology's MT41J128M16JT-125:K is a DDR3 DRAM with 128MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
MT48LC2M32B2P-6AIT:J by Micron Technology

MT48LC2M32B2P-6AIT:J

Micron Technology

Micron Technology's MT48LC2M32B2P-6AIT:J is a 2MX32 Synchronous DRAM with 67108864-bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications. With a low standby current of 0.0025 Amp and common I/O type, it offers fast access time of 5.4 ns.
K4B1G0846G-BCH9 by Samsung

K4B1G0846G-BCH9

Samsung

Samsung's K4B1G0846G-BCH9 DDR3 DRAM features 128MX8 organization, 667 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max supply current of 130 mA.
S70KS1282GABHB020 by Cypress Semiconductor

S70KS1282GABHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Memory Width: 8;
MT48LC16M16A2P-6AAAT:G by Micron Technology

MT48LC16M16A2P-6AAAT:G

Micron Technology

MT48LC16M16A2P-6AAAT:G by Micron Technology is a 16MX16 Synchronous DRAM with 268MB memory density. It operates at 3.3V, has a max access time of 5.4ns, and is suitable for industrial applications requiring fast and reliable memory performance.