TC58NS256ADC by Toshiba | Memory ICs

Image shown is a representation only.

Manufacturer	Toshiba
Manufacturer's Part Number	TC58NS256ADC
Description	EEPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Shape: RECTANGULAR; JESD-609 Code: e0; Width: 37 mm;
Datasheet	TC58NS256ADC Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Organization:	32MX8
Maximum Seated Height:	.84 mm
Programming Voltage (V):	3
Minimum Supply Voltage (Vsup):	3 V
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	22
No. of Words:	33554432 words
Terminal Position:	UNSPECIFIED
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	CMOS
JESD-30 Code:	R-XXMA-X22
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	55 Cel
Width:	37 mm
Memory Density:	268435456 bit
Memory IC Type:	EEPROM
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
Memory Width:	8
No. of Functions:	1
Qualification:	Not Qualified
Length:	45 mm
No. of Words Code:	32M
Nominal Supply Voltage / Vsup (V):	3.3
Parallel or Serial:	SERIAL
Terminal Pitch:	2.54 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	3.6 V

Popular Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;

Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.