Toshiba - TC59S1604

  1. Home
  2. Toshiba - TC59S1604
TC59S1604 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TC59S1604
Description SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; Minimum Supply Voltage (Vsup): 3 V; Technology: CMOS; Additional Features: AUTO/SELF REFRESH; Memory Density: 16777216 bit;
Datasheet TC59S1604 Datasheet
NAME DESCRIPTION
No. of Ports: 1
Memory Density: 16777216 bit
Organization: 4MX4
Self Refresh: YES
Access Mode: DUAL BANK PAGE BURST
Minimum Supply Voltage (Vsup): 3 V
Memory IC Type: SYNCHRONOUS DRAM
Minimum Operating Temperature: 0 Cel
Memory Width: 4
No. of Functions: 1
No. of Words: 4194304 words
Qualification: Not Qualified
Technology: CMOS
Maximum Access Time: 60 ns
No. of Words Code: 4M
Operating Mode: SYNCHRONOUS
Nominal Supply Voltage / Vsup (V): 3.3
Additional Features: AUTO/SELF REFRESH
Maximum Operating Temperature: 70 Cel
Temperature Grade: COMMERCIAL
Maximum Supply Voltage (Vsup): 3.6 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

KMM466S823CT3-F0 by Samsung

KMM466S823CT3-F0

Samsung

Samsung's KMM466S823CT3-F0 is a 8MX64 Synchronous DRAM Module with 64 memory width. It operates at 100 MHz clock frequency, suitable for commercial applications requiring fast data access and storage capabilities. With self-refresh feature and 3-STATE output characteristics, it offers reliable performance in various electronic devices.
MT41K512M8DA-107AIT:P by Micron Technology

MT41K512M8DA-107AIT:P

Micron Technology

Micron Technology's MT41K512M8DA-107AIT:P is a DDR3L DRAM with 512MX8 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With AEC-Q100 screening level, it offers synchronous operation and self-refresh capability.
IS43TR16256AL-125KBL by Integrated Silicon Solution

IS43TR16256AL-125KBL

Integrated Silicon Solution

IS43TR16256AL-125KBL by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast access times in a compact grid array package.
MT46V16M16P-5B:M by Micron Technology

MT46V16M16P-5B:M

Micron Technology

Micron Technology's MT46V16M16P-5B:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT18HTF12872AZ-80EG1 by Micron Technology

MT18HTF12872AZ-80EG1

Micron Technology

Micron Technology's MT18HTF12872AZ-80EG1 is a 240-terminal DRAM with 128MX72 organization, operating at 400 MHz. It has a memory density of 9663676416 bits and supports a max clock frequency of 400 MHz. Ideal for commercial applications requiring high-speed data processing and storage capabilities.
NT5TU64M16DG-3CI by Nanya Technology

NT5TU64M16DG-3CI

Nanya Technology

NT5TU64M16DG-3CI by Nanya Technology is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for industrial applications requiring high memory density and fast access times.
M471B5273CH0-CH9 by Samsung

M471B5273CH0-CH9

Samsung

Samsung M471B5273CH0-CH9 DDR DRAM Module features 256MX8 organization, operates at 667 MHz with 1.5V supply voltage. Ideal for high-performance computing applications due to its synchronous operation and self-refresh capability.
M12L2561616A-6TG2A by Elite Semiconductor Microelectronics Technologyinc

M12L2561616A-6TG2A

Elite Semiconductor Microelectronics Technologyinc

M12L2561616A-6TG2A by Elite Semiconductor is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a nominal voltage of 3.3V and has a max access time of 5.4 ns. This memory IC is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
M378A5143DB0-CPB by Samsung

M378A5143DB0-CPB

Samsung

Samsung M378A5143DB0-CPB is a 512MX64 DDR DRAM MODULE with 1066 MHz clock frequency. Operating at 1.2V, it offers 64-bit memory width and 34359738368 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT47H32M16NF-25EAAT:H by Micron Technology

MT47H32M16NF-25EAAT:H

Micron Technology

Micron Technology's MT47H32M16NF-25EAAT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage, industrial temperature grade, and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive and industrial environments.
W989D6DBGX6E by Winbond Electronics

W989D6DBGX6E

Winbond Electronics

W989D6DBGX6E by Winbond Electronics is a 32MX16 SDRAM with 536MB memory density. Operating at 1.8V, it offers synchronous self-refresh mode and fast access time of 5ns. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.
IS43TR16256AL-125KBLI by Integrated Silicon Solution

IS43TR16256AL-125KBLI

Integrated Silicon Solution

IS43TR16256AL-125KBLI by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast access times in a compact grid array package.
IS42S16400J-7BLI-TR by Integrated Silicon Solution

IS42S16400J-7BLI-TR

Integrated Silicon Solution

IS42S16400J-7BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temp. Ideal for industrial applications requiring high memory density and fast access times.
MTA8ATF2G64HZ-3G2F1 by Micron Technology

MTA8ATF2G64HZ-3G2F1

Micron Technology

DDR4 DRAM MODULE;
W956D8MBYA5I by Winbond Electronics

W956D8MBYA5I

Winbond Electronics

W956D8MBYA5I by Winbond Electronics is an 8MX8 DRAM with a memory density of 67108864 bit. It operates at a max clock frequency of 200 MHz and has a self-refresh feature. This HYPERRAM is suitable for applications requiring high-speed synchronous memory with low power consumption.
K4D263238I-UC50 by Samsung

K4D263238I-UC50

Samsung

Samsung's K4D263238I-UC50 is a 4MX32 GDDR1 DRAM with 200 MHz clock frequency. Operating at 2.5V, it offers 3-state output and supports synchronous mode for common I/O applications. With a compact flatpack design, it suits commercial-grade systems requiring fast memory access and low standby current consumption.
MT48LC8M16A2P-6A:GTR by Micron Technology

MT48LC8M16A2P-6A:GTR

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:GTR is a 8MX16 Synchronous DRAM with a memory density of 134217728 bit. It operates at a max temperature of 70°C and has a supply voltage range of 3V to 3.6V. This DRAM is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.
MT47H64M16HR-3IT:G by Micron Technology

MT47H64M16HR-3IT:G

Micron Technology

Micron Technology's MT47H64M16HR-3IT:G is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and operates in industrial temperature range. Suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT46H128M16LFDD-48IT:CTR by Micron Technology

MT46H128M16LFDD-48IT:CTR

Micron Technology

Micron Technology's MT46H128M16LFDD-48IT:CTR is a 128MX16 LPDDR1 DRAM with 1.8V supply, operating at up to 208MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices like smartphones and tablets.
MT8JTF12864HZ-1G6G1 by Micron Technology

MT8JTF12864HZ-1G6G1

Micron Technology

Micron Technology's MT8JTF12864HZ-1G6G1 is a 128MX64 DDR DRAM MODULE with 204 terminals, operating at 800 MHz. It has a memory density of 8589934592 bits and supports a max clock frequency of 800 MHz. Ideal for commercial applications requiring high-speed data processing and storage capabilities.