TD62003AP by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TD62003AP
Description	NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 500 A; Package Body Material: PLASTIC/EPOXY; Maximum Collector-Emitter Voltage: 50 V;
Datasheet	TD62003AP Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	500 A
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	1000
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	16
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PDIP-T16
No. of Elements:	7
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature:	85 Cel
Maximum VCEsat:	1.6 V

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