TD62007P by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TD62007P
Description	NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .15 A; Maximum VCEsat: 1.6 V; Maximum Collector-Emitter Voltage: 22 V;
Datasheet	TD62007P Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.15 A
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	800
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0
No. of Terminals:	16
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	22 V
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PDIP-T16
No. of Elements:	7
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	75 Cel
Maximum VCEsat:	1.6 V

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