Toshiba - TD62083AFN

  1. Home
  2. Toshiba - TD62083AFN
TD62083AFN by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TD62083AFN
Description NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Transistor Application: SWITCHING;
Datasheet TD62083AFN Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 1000
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 18
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G18
No. of Elements: 8
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature: 85 Cel
Maximum VCEsat: 1.6 V
Maximum Power Dissipation Ambient: .96 W
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2222AUBC by Microchip Technology

2N2222AUBC

Microchip Technology

2N2222AUBC by Microchip is a NPN transistor with max collector-emitter voltage of 50V and max current of 0.8A. It has a min DC current gain of 30, ideal for switching applications. With a small outline package style and ceramic-metal sealed body, it's suitable for surface mount designs.
JANTX2N2222AUA/TR by Microchip Technology

JANTX2N2222AUA/TR

Microchip Technology

JANTX2N2222AUA/TR by Microchip is a NPN BJT transistor with hFE of 30, Vce of 50V, and Ic of 0.8A. Ideal for switching applications due to its fast ton of 35ns and toff of 300ns. It comes in a small outline package suitable for surface mount technology.
BC847CW,115 by NXP Semiconductors

BC847CW,115

NXP Semiconductors

NXP Semiconductors' BC847CW,115 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 420, it operates at max temp of 150°C. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs.
BC856BW,115 by Nexperia

BC856BW,115

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30;
BC817-40LT1G by Onsemi

BC817-40LT1G

Onsemi

BC817-40LT1G by Onsemi is a NPN BJT with 45V VCEO, 0.5A IC, and 100MHz fT. Ideal for small signal applications in electronics due to its high hFE of 250 and compact SOT-23 package. Operating temperature range from -55°C to 150°C makes it suitable for various environments.
2N2222ACSM by Tt Electronics Plc

2N2222ACSM

Tt Electronics Plc

2N2222ACSM by Tt Electronics Plc is a NPN BJT transistor with hFE of 30, Vce of 50V, and fT of 300MHz. Ideal for switching applications due to its fast ton of 35ns and toff of 300ns. Suitable for surface mount designs with small outline package style.
SMBT3904E6327HTSA1 by Infineon Technologies

SMBT3904E6327HTSA1

Infineon Technologies

Infineon's SMBT3904E6327HTSA1 is a NPN BJT transistor with max. power dissipation of 0.33W, hFE of 70, and fT of 300MHz. Ideal for switching applications due to its small outline package style and max. collector-emitter voltage of 40V.
BC817-25 by Dc Components

BC817-25

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N2907A by Crystalonics

2N2907A

Crystalonics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC547B by Microsemi

BC547B

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; JEDEC-95 Code: TO-92; JESD-609 Code: e0;
BC847B by Promax-johnton

BC847B

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified; Transistor Application: AMPLIFIER;
2N2222A by Secos

2N2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
2N2219A by Semitronics

2N2219A

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2907A by Siemens

2N2907A

Siemens

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
BC547ATA by Fairchild Semiconductor

BC547ATA

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC547B by General Semiconductor

BC547B

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
2N3055- by Ge Industrial Solutions

2N3055-

Ge Industrial Solutions

Small Signal Bipolar Transistors;
BC817-40 by Taitron Components

BC817-40

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING;
2N2907A by Texas Instruments

2N2907A

Texas Instruments

2N2907A by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.4W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn-on time (45ns) and high transition frequency (200MHz).
MMBT2222A by National Semiconductor

MMBT2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 1 A;