TD62503FB by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TD62503FB
Description	NPN; Configuration: COMMON EMITTER, 7 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON; Maximum Power Dissipation Ambient: .625 W;
Datasheet	TD62503FB Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.2 A
Configuration:	COMMON EMITTER, 7 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	50
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0
No. of Terminals:	16
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	35 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G16
No. of Elements:	7
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	BUILT-IN RESISTOR RATIO IS 3.70
Maximum Operating Temperature:	85 Cel
Maximum VCEsat:	.8 V
Maximum Power Dissipation Ambient:	.625 W

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