TD62583APG by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TD62583APG
Description	NPN; Configuration: COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 3.7;
Datasheet	TD62583APG Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	70
No. of Terminals:	18
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PDIP-T18
No. of Elements:	8
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Additional Features:	BUILT-IN BIAS RESISTOR RATIO IS 3.7
Peak Reflow Temperature (C):	NOT SPECIFIED

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