Toshiba - TD62583APG

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TD62583APG by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TD62583APG
Description NPN; Configuration: COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 3.7;
Datasheet TD62583APG Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 70
No. of Terminals: 18
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T18
No. of Elements: 8
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 3.7
Peak Reflow Temperature (C): NOT SPECIFIED
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