TD62597AFN by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TD62597AFN
Description	NPN; Configuration: COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet	TD62597AFN Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.2 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	50
No. of Terminals:	18
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G18
No. of Elements:	8
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	LOGIC LEVEL COMPATIBLE, BUILT-IN BAIS RESISTOR
Maximum Operating Temperature:	85 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	.8 V
Maximum Power Dissipation Ambient:	.96 W

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