Toshiba - TD62598AFN

TD62598AFN by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TD62598AFN
Description NPN; Configuration: COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G18;
Datasheet TD62598AFN Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .2 A
Configuration: COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 50
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 18
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G18
No. of Elements: 8
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOGIC LEVEL COMPATIBLE, BUILT-IN BAIS RESISTOR
Maximum Operating Temperature: 85 Cel
Maximum VCEsat: .8 V
Maximum Power Dissipation Ambient: .96 W
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