Toshiba - TD62M4600FG

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TD62M4600FG by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TD62M4600FG
Description PNP; Configuration: 2 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
Datasheet TD62M4600FG Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 150 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: 2 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 60
No. of Terminals: 16
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 10 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G16
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT IN BIAS RESISTOR
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
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