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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | TG2000F |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e0; Minimum Power Gain (Gp): 15 dB; |
| Datasheet | TG2000F Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 15 dB |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| JESD-609 Code: | e0 |
| No. of Terminals: | 5 |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | DUAL GATE, DEPLETION MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 85 Cel |
