TGI1314-50L by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TGI1314-50L
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Drain Current (Abs) (ID): 15 A; Minimum DS Breakdown Voltage: 50 V;
Datasheet	TGI1314-50L Datasheet

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM NITRIDE
Field Effect Transistor Technology:	HIGH ELECTRON MOBILITY
Maximum Drain Current (ID):	15 A
Sub-Category:	FET RF Small Signals
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	50 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-CDFM-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	KU BAND
Maximum Operating Temperature:	175 Cel
Maximum Drain Current (Abs) (ID):	15 A
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	140 W

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