Toshiba - TGI5059-120L

  1. Home
  2. Toshiba - TGI5059-120L
TGI5059-120L by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TGI5059-120L
Description RF Power Field-Effect Transistors;
Datasheet TGI5059-120L Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

934065661112 by NXP Semiconductors

934065661112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Drain Current (ID): 33 A; Transistor Element Material: SILICON;
CG2H40025F by Wolfspeed

CG2H40025F

Wolfspeed

CG2H40025F by Wolfspeed is an N-CHANNEL RF Power FET with a 84V DS Breakdown Voltage and 13dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring Gallium Nitride technology, it operates from -40 to 150 °C with a max ID of 3A and Crss of 0.4pF.
PD57045S by STMicroelectronics

PD57045S

STMicroelectronics

STMicroelectronics PD57045S is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 5A, operates in ENHANCEMENT MODE, and can withstand temperatures up to 165 °C.
BLF175 by Asi Semiconductor

BLF175

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Drain Current (ID): 4 A;
MHT1008NT1 by NXP Semiconductors

MHT1008NT1

NXP Semiconductors

NXP Semiconductors' MHT1008NT1 is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE with a 65V DS Breakdown Voltage and supports S BAND frequencies. The transistor has a max operating temperature of 150°C and comes in a SMALL OUTLINE package style.
BLF6G22L-40BN,118 by Ampleon Netherlands B V

BLF6G22L-40BN,118

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Reference Standard: IEC-60134; No. of Terminals: 6; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STAP85035 by STMicroelectronics

STAP85035

STMicroelectronics

STAP85035 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
BLF6G27-10G by NXP Semiconductors

BLF6G27-10G

NXP Semiconductors

NXP Semiconductors' BLF6G27-10G is a single N-channel RF Power FET with 65V DS breakdown voltage. It operates in enhancement mode for S band applications, offering 3.5A max drain current and can withstand up to 225°C operating temperature. Ideal for amplifier circuits requiring high-frequency performance.
MRF300AN-230MHZ by NXP Semiconductors

MRF300AN-230MHZ

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
ST9045C by STMicroelectronics

ST9045C

STMicroelectronics

RF Power Field-Effect Transistors;
934065121112 by NXP Semiconductors

934065121112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: ENHANCEMENT MODE;
A3G26D055NT4 by NXP Semiconductors

A3G26D055NT4

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
BLF6G10S-45,112 by NXP Semiconductors

BLF6G10S-45,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
PD55015-E by STMicroelectronics

PD55015-E

STMicroelectronics

STMicroelectronics' PD55015-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, it offers 5A Drain Current and 73W Power Dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and can withstand up to 165°C operating temp.
MRF8S21200HSR6 by Freescale Semiconductor

MRF8S21200HSR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
AFT09MS007NT1 by Freescale Semiconductor

AFT09MS007NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 182 W; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel;
SD2921-10 by STMicroelectronics

SD2921-10

STMicroelectronics

SD2921-10 by STMicroelectronics is an N-channel RF Power FET with 125V DS breakdown voltage and 20A max drain current. Ideal for UHF band applications, it operates in enhancement mode with a max power dissipation of 389W.
BLF6G15LS-500H by NXP Semiconductors

BLF6G15LS-500H

NXP Semiconductors

BLF6G15LS-500H by NXP is an N-channel RF power FET designed for switching applications. It features a max drain current of 45 A, a breakdown voltage of 100 V, and operates in the L band. Its flatpack design ensures efficient surface mounting in various electronic devices.
934065325112 by NXP Semiconductors

934065325112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
TSD2921 by STMicroelectronics

TSD2921

STMicroelectronics

TSD2921 by STMicroelectronics is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V and a Min Power Gain of 12dB. It operates in the ULTRA HIGH FREQUENCY BAND, has a Max Power Dissipation of 300W, and is suitable for applications requiring high power amplification in the field of RF communications.