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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | TH50VPN5640EBSB |
| Description | MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 69; Package Code: LFBGA; Package Shape: RECTANGULAR; Memory Density: 67108864 bit; |
| Datasheet | TH50VPN5640EBSB Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Organization: | 4MX16 |
| Maximum Seated Height: | 1.4 mm |
| Minimum Supply Voltage (Vsup): | 2.7 V |
| Sub-Category: | Other Memory ICs |
| Surface Mount: | YES |
| Maximum Supply Current: | 40 mA |
| No. of Terminals: | 69 |
| No. of Words: | 4194304 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, LOW PROFILE, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B69 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | ASYNCHRONOUS |
| Maximum Operating Temperature: | 85 Cel |
| Package Code: | LFBGA |
| Width: | 9 mm |
| Memory Density: | 67108864 bit |
| Mixed Memory Type: | FLASH+SRAM |
| Memory IC Type: | MEMORY CIRCUIT |
| Minimum Operating Temperature: | -25 Cel |
| Memory Width: | 16 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA69,10X12,32 |
| Length: | 12 mm |
| Maximum Access Time: | 85 ns |
| No. of Words Code: | 4M |
| Nominal Supply Voltage / Vsup (V): | 3 |
| Additional Features: | ALSO CONTAINS 32MBIT PSEUDO SRAM |
| Terminal Pitch: | .8 mm |
| Temperature Grade: | OTHER |
| Maximum Supply Voltage (Vsup): | 3.1 V |
| Power Supplies (V): | 3 |
