Toshiba - THM322080AS-60

  1. Home
  2. Toshiba - THM322080AS-60
THM322080AS-60 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number THM322080AS-60
Description DRAM MODULE; Memory Width: 32; Maximum Access Time: 60 ns; No. of Words Code: 2M; No. of Words: 2097152 words; Technology: CMOS;
Datasheet THM322080AS-60 Datasheet
NAME DESCRIPTION
No. of Functions: 1
No. of Ports: 1
No. of Words: 2097152 words
Qualification: Not Qualified
Memory Density: 67108864 bit
Organization: 2MX32
Technology: CMOS
Maximum Access Time: 60 ns
No. of Words Code: 2M
Memory IC Type: DRAM MODULE
Memory Width: 32
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

K4B1G1646E-HCF8 by Samsung

K4B1G1646E-HCF8

Samsung

Samsung's K4B1G1646E-HCF8 DDR3 DRAM features 64MX16 organization, 533 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
IS43LR32160C-6BLI by Integrated Silicon Solution

IS43LR32160C-6BLI

Integrated Silicon Solution

IS43LR32160C-6BLI by Integrated Silicon Solution is a 16MX32 DDR1 DRAM with 166 MHz clock frequency. Operating at 1.8V, it offers 5.5 ns access time and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
MT40A256M16GE-075E:B by Micron Technology

MT40A256M16GE-075E:B

Micron Technology

Micron Technology's MT40A256M16GE-075E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in commercial-grade environments.
S27KL0642GABHI020 by Infineon Technologies

S27KL0642GABHI020

Infineon Technologies

Infineon's S27KL0642GABHI020 DRAM features 8MX8 organization, 200 MHz clock frequency, and 67108864 bit memory density. Ideal for applications requiring high-speed synchronous operation with common I/O type and self-refresh capability. Package style is grid array with very thin profile, suitable for compact designs in various electronic devices.
MT40A1G8SA-062EIT:E by Micron Technology

MT40A1G8SA-062EIT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EIT:E is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for industrial applications with a temperature range of -40 to 95°C, it offers high memory density of 8589934592 bits and supports multi-bank page burst access mode.
W3H64M72E-533SBI by White Electronic Designs

W3H64M72E-533SBI

White Electronic Designs

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: BGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS42S32400F-6TLI by Integrated Silicon Solution

IS42S32400F-6TLI

Integrated Silicon Solution

IS42S32400F-6TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact package.
MT40A1G16RC-062EIT:B by Micron Technology

MT40A1G16RC-062EIT:B

Micron Technology

Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT48LC4M16A2B4-6AIT:J by Micron Technology

MT48LC4M16A2B4-6AIT:J

Micron Technology

Micron Technology's MT48LC4M16A2B4-6AIT:J is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 167MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.
IS42S16320D-7BLI-TR by Integrated Silicon Solution

IS42S16320D-7BLI-TR

Integrated Silicon Solution

IS42S16320D-7BLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation, self-refresh capability, and common I/O type. It features a max clock frequency of 143 MHz and is ideal for industrial applications requiring high-speed memory access in thin profile packages.
TS256MLQ64V8U by Transcend Information

TS256MLQ64V8U

Transcend Information

DDR2 DRAM MODULE;
AS4C16M16SA-6BIN by Alliance Memory

AS4C16M16SA-6BIN

Alliance Memory

Alliance Memory's AS4C16M16SA-6BIN is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, suitable for industrial applications. Featuring self-refresh and common I/O type, it operates at 3.3V with a memory density of 268MB. Ideal for systems requiring fast access times and high memory capacity.
AS4C16M16SA-7TCNTR by Alliance Memory

AS4C16M16SA-7TCNTR

Alliance Memory

AS4C16M16SA-7TCNTR by Alliance Memory is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for applications requiring high-speed memory access in compact spaces due to its small outline and thin profile package style.
MT53E2G32D4DE-046WT:C by Micron Technology

MT53E2G32D4DE-046WT:C

Micron Technology

LPDDR4 DRAM;
MT41J64M16JT-15E:G by Micron Technology

MT41J64M16JT-15E:G

Micron Technology

MT41J64M16JT-15E:G by Micron Technology is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a 1.5V supply voltage and offers 67108864 words of memory. Ideal for applications requiring high-speed synchronous operation and common I/O type, such as servers, workstations, and networking equipment.
MT41K512M16HA-125AIT:A by Micron Technology

MT41K512M16HA-125AIT:A

Micron Technology

Micron Technology's MT41K512M16HA-125AIT:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.
AS4C16M16SA-6BINTR by Alliance Memory

AS4C16M16SA-6BINTR

Alliance Memory

Alliance Memory's AS4C16M16SA-6BINTR is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, 85°C operating temp. Ideal for industrial applications, it features common I/O type, self-refresh mode, and thin profile grid array package.
K4S281632K-UC75 by Samsung

K4S281632K-UC75

Samsung

Samsung's K4S281632K-UC75 is a 8MX16 DRAM with 133 MHz clock frequency, suitable for commercial applications. Features include 3.3V supply voltage, 70°C operating temperature, and 4096 refresh cycles. Ideal for systems requiring high-speed synchronous memory with low power consumption.
MT53E128M32D2DS-046AAT:A by Micron Technology

MT53E128M32D2DS-046AAT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-046AAT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast clock frequency.
MT4KTF25664HZ-1G9P1 by Micron Technology

MT4KTF25664HZ-1G9P1

Micron Technology

Micron Technology's MT4KTF25664HZ-1G9P1 is a DDR3L DRAM MODULE with 256MX64 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and single bank page burst access mode. Ideal for commercial applications requiring high memory density and reliable performance in microelectronic assemblies.