Toshiba - TIM5964-6SL-031

  1. Home
  2. Toshiba - TIM5964-6SL-031
TIM5964-6SL-031 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TIM5964-6SL-031
Description N-CHANNEL; Operating Mode: DEPLETION MODE; Transistor Element Material: SILICON; Highest Frequency Band: C BAND; Qualification: Not Qualified; Field Effect Transistor Technology: JUNCTION;
Datasheet TIM5964-6SL-031 Datasheet
NAME DESCRIPTION
Qualification: Not Qualified
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Operating Mode: DEPLETION MODE
Highest Frequency Band: C BAND
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

PD57070 by STMicroelectronics

PD57070

STMicroelectronics

PD57070 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
MRF1570FNT1 by Freescale Semiconductor

MRF1570FNT1

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
PD60030S by STMicroelectronics

PD60030S

STMicroelectronics

PD60030S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V breakdown voltage, operates in enhancement mode, and supports L-band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
AFT20P060-4NR3 by NXP Semiconductors

AFT20P060-4NR3

NXP Semiconductors

NXP Semiconductors' AFT20P060-4NR3 is an N-CHANNEL RF Power FET with a max operating temperature of 225°C. It features METAL-OXIDE SEMICONDUCTOR technology and a SINGLE configuration, making it ideal for high-power RF applications in various industries.
A2T18S262W12NR3 by NXP Semiconductors

A2T18S262W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
SD57045 by STMicroelectronics

SD57045

STMicroelectronics

SD57045 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in various electronic devices.
STAC1214-250 by STMicroelectronics

STAC1214-250

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934064591118 by NXP Semiconductors

934064591118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 65 V;
934061301112 by NXP Semiconductors

934061301112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
NPT1012B by Nitronex

NPT1012B

Nitronex

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: SOURCE; Package Shape: RECTANGULAR;
A5G35S004N-3400 by NXP Semiconductors

A5G35S004N-3400

NXP Semiconductors

RF Power Field-Effect Transistors;
MW6S010GNR1 by NXP Semiconductors

MW6S010GNR1

NXP Semiconductors

NXP Semiconductors' MW6S010GNR1 is a RF Power FET with 68V DS Breakdown Voltage, suitable for L Band applications. It operates in Enhancement Mode, has 61.4W Max Power Dissipation, and features N-Channel configuration for amplifier circuits.
PTVA101K02EVV1R250XTMA1 by Wolfspeed

PTVA101K02EVV1R250XTMA1

Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-CDFM-F4; Package Shape: RECTANGULAR;
934062175112 by NXP Semiconductors

934062175112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 1; Transistor Element Material: SILICON;
MRFE6VP100HR5 by NXP Semiconductors

MRFE6VP100HR5

NXP Semiconductors

N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
934061174118 by NXP Semiconductors

934061174118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;
RF5L0912750CB4 by STMicroelectronics

RF5L0912750CB4

STMicroelectronics

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
STAC3933 by STMicroelectronics

STAC3933

STMicroelectronics

STAC3933 by STMicroelectronics is a N-CHANNEL RF Power FET with 20A max drain current and 795W max power dissipation. Ideal for high-power applications, it operates at up to 200 °C. This SINGLE configuration FET uses METAL-OXIDE SEMICONDUCTOR technology and is surface mountable.
MMRF1015GNR1 by NXP Semiconductors

MMRF1015GNR1

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
MRF6V10010NR4 by Freescale Semiconductor

MRF6V10010NR4

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;