TIM8596-8 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TIM8596-8
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: 60 W; No. of Terminals: 2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	TIM8596-8 Datasheet

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	10.4 A
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-CDFM-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	X BAND
Maximum Operating Temperature:	175 Cel
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	60 W
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	15 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	240

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