TJ20S04M3L by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TJ20S04M3L
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 20 A;
Datasheet	TJ20S04M3L Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	31 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	20 A
Maximum Pulsed Drain Current (IDM):	40 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	40 V
Maximum Power Dissipation (Abs):	41 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	20 A
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.032 ohm

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