Toshiba - TK200F04N1L,LXGQ

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TK200F04N1L,LXGQ by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK200F04N1L,LXGQ
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Maximum Feedback Capacitance (Crss): 650 pF; Case Connection: DRAIN;
Datasheet TK200F04N1L,LXGQ Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 200 A
Maximum Pulsed Drain Current (IDM): 600 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 375 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .00137 ohm
Avalanche Energy Rating (EAS): 936 mJ
Maximum Feedback Capacitance (Crss): 650 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
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