TK3A90E by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TK3A90E
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 2.5 A; JESD-30 Code: R-PSFM-T3;
Datasheet	TK3A90E Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	217 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2.5 A
JEDEC-95 Code:	TO-220AB
Maximum Pulsed Drain Current (IDM):	7.5 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	900 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	4.6 ohm

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