TK4A65DA by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TK4A65DA
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 650 V;
Datasheet	TK4A65DA Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	205 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3.5 A
Maximum Pulsed Drain Current (IDM):	14 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	650 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	1.9 ohm

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