Toshiba - TK560A60Y

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TK560A60Y by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK560A60Y
Description Power Field-Effect Transistors;
Datasheet TK560A60Y Datasheet
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FDS4675 by Fairchild Semiconductor

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FDB52N20TM by Fairchild Semiconductor

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FQB34P10TM by Fairchild Semiconductor

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IRLML6402GTRPBF by Infineon Technologies

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IRF4905PBF by Infineon Technologies

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IRF4905PBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage and 260A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in the temperature range of -55 to 175°C.
AOD4185 by Alpha & Omega Semiconductor

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International Rectifier

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Infineon Technologies

IRFZ44NSTRLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS(on). With a max power dissipation of 94W and operating temp of 175°C, it's suitable for high-power circuits requiring fast switching capabilities.
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