TK5A90E,S4X by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TK5A90E,S4X
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 3;
Datasheet	TK5A90E,S4X Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4.5 A
Maximum Pulsed Drain Current (IDM):	13.5 A
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	40 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	3.1 ohm
Avalanche Energy Rating (EAS):	202 mJ
Maximum Feedback Capacitance (Crss):	8 pF
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	900 V
Peak Reflow Temperature (C):	260

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