Toshiba - TK5A90E,S4X

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TK5A90E,S4X by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK5A90E,S4X
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 3;
Datasheet TK5A90E,S4X Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.5 A
Maximum Pulsed Drain Current (IDM): 13.5 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 40 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 3.1 ohm
Avalanche Energy Rating (EAS): 202 mJ
Other Names: 264-TK5A90ES4X
264-TK5A90E,S4X
264-TK5A90ES4X-ND
264-TK5A90E,S4X-ND
Maximum Feedback Capacitance (Crss): 8 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 900 V
Peak Reflow Temperature (C): 260
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