Toshiba - TK5R1P08QM,RQ

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TK5R1P08QM,RQ by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK5R1P08QM,RQ
Description Power Bipolar Transistors;
Datasheet TK5R1P08QM,RQ Datasheet
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BD140 by NXP Semiconductors

BD140

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP115 by Rectron

TIP115

Rectron

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT; JESD-609 Code: e3;
TIP127 by Continental Device India

TIP127

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;
TIP120 by Swampscott Electronics

TIP120

Swampscott Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
TIP117 by Central Semiconductor

TIP117

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
TIP142 by New Jersey Semiconductor Products

TIP142

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 100 V; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 500;
MJE340 by Central Semiconductor

MJE340

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20.8 W; Maximum Collector Current (IC): .5 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
TIP31C by Power Innovations

TIP31C

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Case Connection: COLLECTOR; JESD-30 Code: R-PSFM-T3;
TIP32C by Microsemi

TIP32C

Microsemi

PNP; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 100 V; JESD-30 Code: R-PSFM-T2;
2N2907A by Central Semiconductor

2N2907A

Central Semiconductor

Power Bipolar Transistors; Terminal Finish: TIN LEAD; JESD-609 Code: e0; Qualification: Not Qualified;
TIP127 by Fairchild Semiconductor

TIP127

Fairchild Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Application: SWITCHING;
NJVMJD44H11G by Onsemi

NJVMJD44H11G

Onsemi

NJVMJD44H11G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of min. 40 and operates up to 150°C. Suitable for surface mount designs in automotive electronics (AEC-Q101 compliant).
2N3055 by Asi Semiconductor

2N3055

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP41C by Bourns

TIP41C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Package Shape: RECTANGULAR;
ULN2804A by Motorola

ULN2804A

Motorola

ULN2804A by Motorola is a power BJT with NPN polarity and 8 banks of Darlington configuration. It has a max VCEsat of 1.6V and can handle a max collector current (IC) of 0.5A. This transistor is commonly used for switching applications due to its built-in diode and resistor.
BD679A by Central Semiconductor

BD679A

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP42C by Baneasa S A

TIP42C

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JEDEC-95 Code: TO-220AB; Qualification: Not Qualified;
TIP41C by Forward International Electronics

TIP41C

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BDW93C by Onsemi

BDW93C

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: R-PSFM-T3;
BDX53C by STMicroelectronics

BDX53C

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;