Toshiba - TK60S06K3L,LXHQ

  1. Home
  2. Toshiba - TK60S06K3L,LXHQ
TK60S06K3L,LXHQ by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TK60S06K3L,LXHQ
Description Power Field-Effect Transistors;
Datasheet TK60S06K3L,LXHQ Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FQT5P10TF by Fairchild Semiconductor

FQT5P10TF

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MSC035SMA170B by Microchip Technology

MSC035SMA170B

Microchip Technology

Power Field-Effect Transistors;
IRFZ44NSTRL by International Rectifier Hirel Products

IRFZ44NSTRL

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified; Package Shape: RECTANGULAR;
PSMN4R8-100BSE by Nexperia

PSMN4R8-100BSE

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 405 W; Terminal Position: SINGLE; Peak Reflow Temperature (C): 260;
PMV20ENR by NXP Semiconductors

PMV20ENR

NXP Semiconductors

PMV20ENR by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 7.6A and power dissipation of 6.94W in enhancement mode. Ideal for applications requiring high-power handling, it operates at temperatures up to 150°C and features surface mount configuration for easy installation.
IPB017N10N5LFATMA1 by Infineon Technologies

IPB017N10N5LFATMA1

Infineon Technologies

Infineon's IPB017N10N5LFATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 720A IDM, and 0.0017 ohm RDS(on). Ideal for power applications requiring high current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation of 313W and wide operating temperature range (-55 to 150 °C).
STH2N120K5-2AG by STMicroelectronics

STH2N120K5-2AG

STMicroelectronics

Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Peak Reflow Temperature (C): 245; Terminal Finish: MATTE TIN;
RFD16N05LSM9A by Fairchild Semiconductor

RFD16N05LSM9A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; JEDEC-95 Code: TO-252AA; Terminal Form: GULL WING;
IRLML6244TRPBF by International Rectifier

IRLML6244TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (ID): 6.3 A; Package Shape: RECTANGULAR;
NDT456P by Onsemi

NDT456P

Onsemi

NDT456P by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 7.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it offers 0.03 ohm On Resistance and can handle up to 20A Pulsed Drain Current.
IRLL014NTRPBF by Infineon Technologies

IRLL014NTRPBF

Infineon Technologies

IRLL014NTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 16A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 32mJ and 0.14 ohm Drain-Source On Resistance.
IRLML6401TR by International Rectifier

IRLML6401TR

International Rectifier

IRLML6401TR by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 34A IDM, 33mJ EAS, and 0.05 ohm RDS(ON). With ENHANCEMENT MODE operation and GULL WING terminals, it offers efficient performance in a SMALL OUTLINE package.
IRFP460APBF by Vishay Intertechnology

IRFP460APBF

Vishay Intertechnology

Vishay Intertechnology's IRFP460APBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 280W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
IRF1010NSTRLPBF by Infineon Technologies

IRF1010NSTRLPBF

Infineon Technologies

IRF1010NSTRLPBF by Infineon Technologies is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 290A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.011 ohm Drain-Source On Resistance and can handle up to 170W power dissipation.
FDS2572 by Fairchild Semiconductor

FDS2572

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Transistor Application: SWITCHING;
AUIRF7759L2TR1 by International Rectifier

AUIRF7759L2TR1

International Rectifier

AUIRF7759L2TR1 by International Rectifier is a N-CHANNEL Power FET with 375A ID and 125W power dissipation. Ideal for high-power applications, it operates at up to 175°C. Suitable for surface mount configurations, this METAL-OXIDE SEMICONDUCTOR transistor offers robust performance in demanding environments.
AOD4185 by Alpha & Omega Semiconductor

AOD4185

Alpha & Omega Semiconductor

AOD4185 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 40V DS Breakdown Voltage, 115A IDM, and 0.015 ohm RDS(ON). Ideal for power management applications requiring high drain current capabilities in a compact SMALL OUTLINE package.
IRFP460LCPBF by Vishay Intertechnology

IRFP460LCPBF

Vishay Intertechnology

Vishay Intertechnology's IRFP460LCPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 80A IDM and 960mJ EAS ratings. Operating in ENHANCEMENT MODE, it features 0.27 ohm Drain-Source On Resistance and can handle up to 280W power dissipation.
FDMS86101A by Fairchild Semiconductor

FDMS86101A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Transistor Element Material: SILICON; Terminal Position: DUAL;
BSC035N10NS5ATMA1 by Infineon Technologies

BSC035N10NS5ATMA1

Infineon Technologies

Infineon BSC035N10NS5ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.0035 ohm RDS(on), and 400A IDM. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Features METAL-OXIDE SEMICONDUCTOR tech in a SMALL OUTLINE package with DUAL terminals.