Toshiba - TK6A55DA(Q

  1. Home
  2. Toshiba - TK6A55DA(Q
TK6A55DA(Q by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TK6A55DA(Q
Description Power Field-Effect Transistors;
Datasheet TK6A55DA(Q Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

STY60NK30Z by STMicroelectronics

STY60NK30Z

STMicroelectronics

STY60NK30Z by STMicroelectronics is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 240A IDM and 0.045 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The transistor comes in a RECTANGULAR package with Matte Tin finish, offering high power dissipation of 450W.
MSC035SMA170B by Microchip Technology

MSC035SMA170B

Microchip Technology

Power Field-Effect Transistors;
IRFR3410TRPBF by International Rectifier

IRFR3410TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
SUD50P04-08-GE3 by Vishay Intertechnology

SUD50P04-08-GE3

Vishay Intertechnology

Vishay Intertechnology's SUD50P04-08-GE3 is a P-channel power FET with 40V DS breakdown voltage and 50A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 73.5W.
CSD18504Q5AT by Texas Instruments

CSD18504Q5AT

Texas Instruments

CSD18504Q5AT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 275A IDM, and 0.0098 ohm Drain-Source Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 150°C and -55°C min temp.
IRLL024NTRPBF by International Rectifier

IRLL024NTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Case Connection: DRAIN;
ZVN0545GTA by Zetex Plc

ZVN0545GTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; JESD-30 Code: R-PDSO-G4; Maximum Drain Current (ID): .14 A;
SPW47N60C3 by Infineon Technologies

SPW47N60C3

Infineon Technologies

SPW47N60C3 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a Max Drain Current of 47A and 0.07 ohm On Resistance, suitable for high-power applications. Ideal for use in power supplies, motor control, and industrial equipment due to its high current handling capabilities.
FDMS86101DC by Fairchild Semiconductor

FDMS86101DC

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 14.5 A;
AUIRF7316QTR by International Rectifier

AUIRF7316QTR

International Rectifier

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.9 A; No. of Terminals: 8;
FDB3632_F085 by Fairchild Semiconductor

FDB3632_F085

Fairchild Semiconductor

Fairchild Semiconductor's FDB3632_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 12A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.009 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 310W and can withstand temperatures up to 175°C.
STP80NF10 by STMicroelectronics

STP80NF10

STMicroelectronics

STP80NF10 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 350mJ EAS, and 0.015 ohm RDS(ON). With a max power dissipation of 300W and operating temperature up to 175°C, it's suitable for high-power circuits.
BSS123 by Calogic

BSS123

Calogic

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (ID): .17 A; Operating Mode: ENHANCEMENT MODE;
IRF7425TRPBF-1 by International Rectifier

IRF7425TRPBF-1

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
IRF7759L2TRPBF by Infineon Technologies

IRF7759L2TRPBF

Infineon Technologies

Infineon's IRF7759L2TRPBF is a N-CHANNEL FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 640A IDM, 257mJ EAS, and 0.0023 ohm RDS(on). Operates in ENHANCEMENT MODE with 175°C max temp, suitable for high-power requirements in various electronic devices.
2N7002PV,115 by NXP Semiconductors

2N7002PV,115

NXP Semiconductors

2N7002PV,115 by NXP Semiconductors is an N-CHANNEL Power FET with 0.35A Max Drain Current and 0.5W Max Power Dissipation. It operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 150 °C. Ideal for applications requiring high power efficiency in compact designs.
IRLML6401TR by International Rectifier

IRLML6401TR

International Rectifier

IRLML6401TR by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 34A IDM, 33mJ EAS, and 0.05 ohm RDS(ON). With ENHANCEMENT MODE operation and GULL WING terminals, it offers efficient performance in a SMALL OUTLINE package.
IRFL9014PBF by International Rectifier

IRFL9014PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
NX3008NBKW,115 by NXP Semiconductors

NX3008NBKW,115

NXP Semiconductors

NX3008NBKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.35A and power dissipation of 0.31W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C such as power management systems.
FDT434P by Fairchild Semiconductor

FDT434P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 6 A; No. of Terminals: 4;