Toshiba - TMP1919-60

  1. Home
  2. Toshiba - TMP1919-60
TMP1919-60 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TMP1919-60
Description Other Transistors;
Datasheet TMP1919-60 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BD139 by Telefunken Microelectronics

BD139

Telefunken Microelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BC847B by Allegro MicroSystems

BC847B

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP147T by Transys Electronics

TIP147T

Transys Electronics

Other Transistors;
BDX53C by Tt Electronics Plc

BDX53C

Tt Electronics Plc

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
2N4401 by Sinyork

2N4401

Sinyork

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
BC557B by Jiangsu Changjiang Electronics Technology

BC557B

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP3055 by Tt Electronics Plc

TIP3055

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
BD243C by Mospec Semiconductor

BD243C

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
2N4401 by Panjit International

2N4401

Panjit International

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
MPSA92 by Plessey Semiconductors Discrete Components Div

MPSA92

Plessey Semiconductors Discrete Components Div

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
TIP111 by Jiangsu Changjiang Electronics Technology

TIP111

Jiangsu Changjiang Electronics Technology

TIP111 by Jiangsu Changjiang Electronics Technology is an NPN Darlington transistor with a max power dissipation of 50W, min DC current gain of 500, and max collector current of 4A. It is commonly used in various applications requiring high power amplification and switching capabilities.
IRF9530 by Siliconix

IRF9530

Siliconix

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 12 A;
D44H8 by Inchange Semiconductor

D44H8

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
TIP41C by Inchange Semiconductor

TIP41C

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BC547C-G by Weitron Technology

BC547C-G

Weitron Technology

BC547C-G by Weitron Tech is an NPN transistor with max power dissipation of 0.625W, min DC current gain of 420, and max operating temp of 150°C. Ideal for applications requiring a single configuration such as amplification circuits due to its high transition frequency of 150MHz.
2N3019 by Transistor & Electronic

2N3019

Transistor & Electronic

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
BC846 by North American Philips Discrete Products Div

BC846

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BSS84AKMB,315 by NXP Semiconductors

BSS84AKMB,315

NXP Semiconductors

BSS84AKMB,315 by NXP Semiconductors is a P-CHANNEL transistor with a max drain current of 0.23A and power dissipation of 0.715W in enhancement mode. It utilizes metal-oxide semiconductor technology, operates at up to 150°C, and is ideal for surface mount applications requiring high efficiency and performance.
2N3055 by Comset Semiconductors

2N3055

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP41C by Semitronics

TIP41C

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;