Toshiba - TMP2323-60

  1. Home
  2. Toshiba - TMP2323-60
TMP2323-60 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TMP2323-60
Description N-CHANNEL; Maximum Drain Current (ID): 46 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 46 A; Maximum Power Dissipation Ambient: 185 W; Maximum Operating Temperature: 175 Cel;
Datasheet TMP2323-60 Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 46 A
Maximum Drain Current (Abs) (ID): 46 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: 185 W
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC546B by Allegro MicroSystems

BC546B

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP117 by North American Philips Discrete Products Div

TIP117

North American Philips Discrete Products Div

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
FDN306P-F095 by Fairchild Semiconductor

FDN306P-F095

Fairchild Semiconductor

FDN306P-F095 by Fairchild Semiconductor is a P-CHANNEL MOSFET with 2.6A max drain current and 0.5W max power dissipation. Ideal for surface mount applications, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices requiring efficient power management.
BC817-40 by Unisonic Technologies

BC817-40

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 150 Cel;
TIP29C by North American Philips Discrete Products Div

TIP29C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP42C by Transys Electronics

TIP42C

Transys Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MJE3055T by Semiconductor Technology

MJE3055T

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP125 by Philips Semiconductors

TIP125

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
2N3055 by Artesyn Technologies

2N3055

Artesyn Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .01 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N2222A by Micropac Industries

2N2222A

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847B by Sprague Electric

BC847B

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N7000-G by Weitron Technology

2N7000-G

Weitron Technology

Other Transistors;
BD140 by Philips Semiconductors

BD140

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BC337-40 by Sprague Electric

BC337-40

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Terminal Finish: Tin/Lead (Sn/Pb);
BD243C by General Electric Solid State

BD243C

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
TIP122 by Boca Semiconductor

TIP122

Boca Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
BD139 by North American Philips Discrete Products Div

BD139

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP142T by Inchange Semiconductor

TIP142T

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 1000;
BC847 by Philips Semiconductors

BC847

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC846B by Sprague Electric

BC846B

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;